{"id":4741,"date":"2013-08-20T09:03:12","date_gmt":"2013-08-20T13:03:12","guid":{"rendered":"https:\/\/engineering.jhu.edu\/materials\/?p=4741"},"modified":"2013-08-20T09:03:12","modified_gmt":"2013-08-20T13:03:12","slug":"reducing-leakage-currents-in-n-channel-organic-field-effect-transistors-using-molecular-dipole-monolayers-on-nanoscale-oxides","status":"publish","type":"news","link":"https:\/\/engineering.jhu.edu\/materials\/news\/reducing-leakage-currents-in-n-channel-organic-field-effect-transistors-using-molecular-dipole-monolayers-on-nanoscale-oxides\/","title":{"rendered":"Reducing Leakage Currents in N-Channel Organic Field-Effect Transistors Using Molecular Dipole Monolayers on Nanoscale Oxides"},"content":{"rendered":"

\"monolayer<\/a>Leakage currents through the gate dielectric of thin film transistors remain a roadblock to the fabrication of organic field-effect transistors (OFETs) on ultrathin dielectrics. We report the first investigation of a monolayer dipole as an electrostatic barrier to reduce leakage currents in OFETs fabricated on a minimal, leaky ~10 nm SiO2 dielectric on highly-doped Si. The electric field associated with 1H,1H,2H,2H-perfluoro-octyltriethoxysilane (FOTS) and octyltriethoxysilane (OTS) dipolar chains affixed to the oxide surface of silicon wafers gave an order of magnitude decrease in gate leakage current, and a two order-of magnitude increase in on\/off ratio for a naphthalenetetracarboxylic diimide (NTCDI) OFET. Relative device performance from OTS and FOTS treatments was dictated primarily by the organosilane chain and not the underlying siloxane-substrate bond. Our results highlight the potential of dipolar SAMs as performance-enhancing layers for marginal quality dielectrics, broadening the material spectrum for low power, ultrathin organic electronics.<\/p>\n

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